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| UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. NPN SILICON TRANSISTOR Lead-free: 2N4401L Halogen-free:2N4401G ORDERING INFORMATION Normal 2N4401-T92-B 2N4401-T92-K Order Number Lead Free 2N4401L-T92-B 2N4401L-T92-K Halogen Free 2N4401G-T92-B 2N4401G-T92-K Package TO-92 TO-92 Pin Assignment 1 2 3 E B C E B C Packing Tape Box Bulk www.unisonic.com.tw Copyright (c) 2009 Unisonic Technologies Co., Ltd 1 of 6 QW-R201-052.C 2N4401 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Power Dissipation SYMBOL VCBO VCEO VEBO IC PD NPN SILICON TRANSISTOR RATINGS 60 40 6 600 625 UNIT V V V mA mW ABSOLUTE MAXIMUM RATING (Ta=25C, unless otherwise specified) Derate above 25C 5.0 mW/C Junction Temperature TJ +150 C Storage Temperature TSTG -40 ~ +150 C Notes: 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA (Ta=25C, unless otherwise specified) CHARACTERISTIC Junction to Ambient Junction to Case SYMBOL JA JC RATING 200 83.3 TYP UNIT C/W C/W MAX UNIT V V V A A ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO IC=0.1mA, IE=0 60 Collector-Emitter Breakdown Voltage (note) BVCEO IC=1mA, IB=0 40 Emitter-Base Breakdown Voltage BVEBO IE=0.1mA, IC=0 6 Collector Cut-off Current ICEX VCE=35V, VEB=0.4V Base Cut-off Current IBL VCE=35V, VEB=0.4V ON CHARACTERISTICS (note) hFE1 VCE=1V, IC=0.1mA 20 hFE2 VCE=1V, IC=1mA 40 hFE3 VCE=1V, IC=10mA 80 DC Current Gain hFE4 VCE=1V, IC=150mA 100 hFE5 VCE=2V, IC=500mA 40 VCE(SAT1) IC=150mA, IB=15mA Collector-Emitter Saturation Voltage VCE(SAT2) IC=500mA, IB=50mA VBE(SAT1) IC=150mA, IB=15mA 0.75 Base-Emitter Saturation Voltage VBE(SAT2) IC=500mA, IB=50mA SMALL SIGNAL CHARACTERISTICS1 Current Gain Bandwidth Product fT VCE=10V, IC=20mA, f=100MHz 250 Collector-Base Capacitance Ccb VCB=5V, IE=0, f=140kHz Emitter-Base Capacitance Ceb VBE=0.5V, IC=0, f=140kHz Input Impedance hie VCE=10V, IC=1mA, f=1kHz 1 Voltage Feedback Ratio hre VCE=10V, IC=1mA, f=1kHz 0.1 Small-Signal Current Gain hfe VCE=10V, IC=1mA, f=1kHz 40 Output Admittance hoe VCE=10V, IC=1mA, f=1kHz 1 SWITCHING CHARACTERISTICS VCC=30V, VEB=2V Delay Time tD IC=150mA IB1=15mA VCC=30V, VEB=2V Rise Time tR IC=150mA IB1=15mA Storage Time tS VCC=30V, IC=150mA Fall Time tF IB1= IB2=15mA Note: Pulse test: PulseWidth300s, Duty Cycle2% 300 0.4 0.75 0.95 1.2 V V V V MHz pF pF k x10-4 mhos ns ns ns ns 6.5 30 15 8 500 30 15 20 225 30 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R201-052.C 2N4401 TEST CIRCUITS 30V 200 16V 0 220ns NPN SILICON TRANSISTOR 1K 500 Figure1. Saturated Turn-On Switching Timer UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R201-052.C 2N4401 TYPICAL CHARACTERISTICS Typical Pulsed Current Gain vs Collector Current VCE =5V 400 300 200 100 125 NPN SILICON TRANSISTOR Typical Pulsed Current Gain, hFE 500 Collector-Emitter Voltage, VCESAT (V) Collector-Emitter Saturation Voltage vs Collector Current 0.4 =10 125 0.2 25 0.1 -40 1 10 100 Collector Current, IC (mA) 500 0.3 25 -40 0 0.1 0.3 1 3 10 30 100 300 Collector Current, IC (mA) Base-Emitter OnVoltage, VBEON (V) 500 100 10 1 0.1 Collector-Cutoff Current vs Ambient Temperature VCB=40V 20 16 Cte 12 8 4 25 50 75 100 125 150 Ambient Temperature, TA() 0.1 1 10 Reverse Bias Voltage (V) 100 Cob Emitter Transition and Output Capacitance vs Reverse Bias Voltage f=1MHz Base-Emitter Voltage, VBESAT (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R201-052.C 2N4401 TYPICAL CHARACTERISTICS(Cont.) Turn On and Turn Off Times vs Collector Current IC IB1=IB2= 10 VCC =25V Time (ns) 240 160 80 ton 0 10 100 1000 Collector Current, IC (mA) 0 10 toff Time (ns) 240 160 80 tD NPN SILICON TRANSISTOR 400 320 400 320 Switching Times vs Collector Current IB1=IB2= VCC =25V tS tR IC 10 tF 100 1000 Collector Current, IC (mA) Char.Relative To Voltage at TA=25 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Char.Relative To Voltage at VCE=10V Char.Relative To Voltage at IC=10mA Power Dissipation, PD (W) 5 of 6 QW-R201-052.C 2N4401 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R201-052.C |
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